发明申请
- 专利标题: Semiconductor integrated circuit device
- 专利标题(中): 半导体集成电路器件
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申请号: US11476106申请日: 2006-06-28
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公开(公告)号: US20070024337A1公开(公告)日: 2007-02-01
- 发明人: Chen Teh , Mototsugu Hamada
- 申请人: Chen Teh , Mototsugu Hamada
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2005-190400 20050629; JP2006-158893 20060607
- 主分类号: H03K3/017
- IPC分类号: H03K3/017
摘要:
The semiconductor integrated circuit device is a semiconductor integrated circuit device having a pulse generator and a latch circuit. The pulse generator has a first charge/discharge path and a second charge/discharge path and a charge unit for pre-charging first nodes. The first charge/discharge path and the second charge/discharge path include: two first switching units, connected to the first nodes, and configured to control, according to an input signal, conduction and non-conduction of the first charge/discharge path and the second charge/discharge path; and a second switching unit, disposed between a second node and a reference voltage node, and configured to be turned on in a period prior to capturing the input signal to allow an electric charge accumulated at the second node to be discharged to the reference voltage node, and at the same time, configured to be turned on in a period of capturing the input signal to allow the first node to discharge.
公开/授权文献
- US07479806B2 Semiconductor integrated circuit device 公开/授权日:2009-01-20
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