发明申请
- 专利标题: Thin film transistor substrate of a horizontal electric field type LCD and fabricating method thereof
- 专利标题(中): 水平电场型LCD薄膜晶体管基板及其制造方法
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申请号: US11542249申请日: 2006-10-04
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公开(公告)号: US20070024793A1公开(公告)日: 2007-02-01
- 发明人: Soon-Sung Yoo , Youn-Gyoung Chang , Heung-Lyul Cho
- 申请人: Soon-Sung Yoo , Youn-Gyoung Chang , Heung-Lyul Cho
- 专利权人: LG PHILIPS LCD CO., LTD.
- 当前专利权人: LG PHILIPS LCD CO., LTD.
- 优先权: KR2003-0077656 20031104
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343
摘要:
A thin film transistor substrate structure of a horizontal electric field type LCD comprises a plurality of signal lines including a gate, a data, and a common lines disposed on a substrate; the data line intersecting with the gate and common lines, a gate insulating film disposed between the data line and the gate and common lines, a pixel area being defined by the intersection of the data and gate lines; a thin film transistor disposed at the intersection of the data line and gate line; a common and a pixel electrodes both having a portion extended into the pixel area; a protective film disposed over the substrate and the thin film transistor; and at least one pad structure including an upper pad electrode contacting a lower pad electrode within a first contact hole wherein the upper pad electrode is absent from the upper surface of the protective film.
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