发明申请
- 专利标题： Magnetoresistive device and nonvolatile magnetic memory equipped with the same
- 专利标题（中）： 磁阻器件和配备相同的非易失性磁存储器
-
申请号： US11493892申请日： 2006-07-27
-
公开(公告)号： US20070025029A1公开(公告)日： 2007-02-01
- 发明人: Jun Hayakawa , Hideo Ohno , Shoji Ikeda
- 申请人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
- 优先权： JP2005-219526 20050728; JP2006-181979 20060630
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.
公开/授权文献
信息查询
