发明申请
- 专利标题: METHOD OF FABRICATING METAL-INSULATOR-METAL CAPACITOR
- 专利标题(中): 金属绝缘体 - 金属电容器的制造方法
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申请号: US11460916申请日: 2006-07-28
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公开(公告)号: US20070026625A1公开(公告)日: 2007-02-01
- 发明人: Jung-Hee CHUNG , Jong-Cheol LEE , Jae-Hyoung CHOI , Jeong-Sik CHOI , Se-Hoon OH , Cha-Young YOO
- 申请人: Jung-Hee CHUNG , Jong-Cheol LEE , Jae-Hyoung CHOI , Jeong-Sik CHOI , Se-Hoon OH , Cha-Young YOO
- 优先权: KR10-2005-0069139 20050728
- 主分类号: H01L21/473
- IPC分类号: H01L21/473
摘要:
In one embodiment, a method of fabricating a MIM capacitor includes forming an interlayer insulating layer having a contact plug on a semiconductor substrate, forming an etch stop layer on the interlayer insulating layer, and forming a mold layer having an opening exposing the contact plug on the etch stop layer. Next, a first conductive layer for the lower electrode is formed on the sidewalls and the bottom of the opening, and a photoresistive layer is formed on the first conductive layer. The mold layer and the photoresistive layer are then removed, and a composite dielectric layer is formed on the lower electrode. A second conductive layer is then formed on the composite dielectric layer. The composite dielectric layer may be composed of an oxide hafnium (HfO2) dielectric layer and an oxide aluminum (Al2O3) dielectric layer, with the oxide hafnium dielectric layer having a thickness of about 20 Å to about 50 Å. The oxide aluminum dielectric layer is formed with a thickness determined by subtracting the thickness of the oxide hafnium dielectric layer from a composite dielectric layer thickness corresponding to an equivalent oxide dielectric layer thickness set to provide a predetermined capacitance of the capacitor.
公开/授权文献
- US1224591A Ellipsograph. 公开/授权日:1917-05-01