发明申请
- 专利标题: Thin film transistor substrate using a horizontal electric field
- 专利标题(中): 薄膜晶体管基板采用水平电场
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申请号: US11544748申请日: 2006-10-10
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公开(公告)号: US20070029551A1公开(公告)日: 2007-02-08
- 发明人: Soon Sung Yoo , Oh Nam Kwon , Heung Lyul Cho
- 申请人: Soon Sung Yoo , Oh Nam Kwon , Heung Lyul Cho
- 专利权人: LG.Philips LCD Co., Ltd.
- 当前专利权人: LG.Philips LCD Co., Ltd.
- 优先权: KRP2003-77661 20031104
- 主分类号: H01L29/04
- IPC分类号: H01L29/04
摘要:
A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.
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