发明申请
- 专利标题: SONOS memory cell having high-K dielectric
- 专利标题(中): 具有高K电介质的SONOS存储单元
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申请号: US11196434申请日: 2005-08-04
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公开(公告)号: US20070029601A1公开(公告)日: 2007-02-08
- 发明人: Takashi Orimoto , Joong Jeon , Hidehiko Shiraiwa , Simon Chan , Harpreet Sachar
- 申请人: Takashi Orimoto , Joong Jeon , Hidehiko Shiraiwa , Simon Chan , Harpreet Sachar
- 主分类号: H01L29/788
- IPC分类号: H01L29/788 ; H01L21/336
摘要:
A semiconductor memory device may include an intergate dielectric layer of a high-K dielectric material interposed between a floating gate and a control gate. With this intergate high-K dielectric in place, the memory device may be erased using Fowler-Nordheim tunneling.
公开/授权文献
- US07446369B2 SONOS memory cell having high-K dielectric 公开/授权日:2008-11-04