A method of manufacturing a semiconductor structure having a wafer through-contact and a corresponding semiconductor structure This invention provides a method of manufacturing a semiconductor structure having a wafer through-contact and a corresponding semiconductor structure. The method comprises the steps of: providing a semiconductor wafer (1) having a bulk region (1a) and an active region (1b); forming a plurality of contact trenches (5a-5f) in said semiconductor wafer (1) which extend from an upper surface (O) of said active region (1b) into said bulk region (1a); forming a first dielectric isolation layer (8) on the sidewalls and the bottoms of said contact trenches (5a-5f); providing a first conductive filling (10) in said plurality of contact trenches (5a-5f); forming an aligned via (V) in said semiconductor wafer (1) which extends from a backside (B) of said bulk region (1a) into said plurality of contact trenches (5a-5f) and exposes the conductive filling (10) of said plurality of contact trenches (5a-5f); providing a second dielectric isolation layer (15) on the sidewall of said via (V); and providing a second conductive filling (20) in said via (V) which contacts the exposed conductive filling (10) of said plurality of contact trenches (5a-5f) thus forming said wafer through-contact.