发明申请
US20070034925A1 Fin-field effect transistors (Fin-FETs) having protection layers
有权
具有保护层的鳍场效应晶体管（Fin-FET）
- 专利标题： Fin-field effect transistors (Fin-FETs) having protection layers
- 专利标题（中）： 具有保护层的鳍场效应晶体管（Fin-FET）
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申请号： US11586225申请日： 2006-10-25
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公开(公告)号： US20070034925A1公开(公告)日： 2007-02-15
- 发明人: Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , In-Soo Jung , Jin-Hwa Heo
- 申请人： Deok-Hyung Lee , Si-Young Choi , Byeong-Chan Lee , In-Soo Jung , Jin-Hwa Heo
- 优先权： KR2003-43628 20030630
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is provided on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is provided in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is provided on the first insulation layer and a second insulation layer is provided on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin.
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