发明申请
- 专利标题: Semiconductor device and a manufacturing method of the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US11500945申请日: 2006-08-09
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公开(公告)号: US20070037321A1公开(公告)日: 2007-02-15
- 发明人: Tomoko Higashino , Chuichi Miyazaki , Yoshiyuki Abe
- 申请人: Tomoko Higashino , Chuichi Miyazaki , Yoshiyuki Abe
- 优先权: JP2005-231946 20050810
- 主分类号: H01L21/58
- IPC分类号: H01L21/58
摘要:
The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.
公开/授权文献
- US07514294B2 Semiconductor device and a manufacturing method of the same 公开/授权日:2009-04-07
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