发明申请
- 专利标题: Manufacturing strained silicon substrates using a backing material
- 专利标题(中): 使用背衬材料制造应变硅衬底
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申请号: US11203547申请日: 2005-08-12
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公开(公告)号: US20070037323A1公开(公告)日: 2007-02-15
- 发明人: Francois Henley , Harry Kirk
- 申请人: Francois Henley , Harry Kirk
- 申请人地址: US CA San Jose
- 专利权人: Silicon Genesis Corporation
- 当前专利权人: Silicon Genesis Corporation
- 当前专利权人地址: US CA San Jose
- 主分类号: H01L21/84
- IPC分类号: H01L21/84 ; H01L21/00
摘要:
A method for forming a strained silicon layer of semiconductor material. The method includes providing a deformable surface region having a first predetermined radius of curvature, which is defined by R(l) and is defined normal to the surface region. A backing plate is coupled to the deformable surface region to cause the deformable surface region to be substantially non-deformable. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.