发明申请
US20070037411A1 Method of manufacturing an electronic device 审中-公开
制造电子装置的方法

Method of manufacturing an electronic device
摘要:
The electronic device with a layer of mesoporous silica can be obtained by applying a composition comprising alkoxysilane, a surfactant and a solvent onto a substrate, and by subsequently removing the surfactant and the solvent. The customary dehydroxylation treatment is not necessary if the composition contains a mixture of tetra-alkoxysilane, particularly teatraethoxyorthosilicate (TEOS), and an alkyl-substituted alkoxysilane, particularly a phenyl-substituted, methyl-substituted or ethyl-substituted trialkoxysilane. If both silanes are present in a molar ratio of approximately 1:1, a layer with a dielectric constant of 2.5 or less is obtained.
信息查询
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件,例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06,H01L21/16及H01L21/18各组不包含的或有或无杂质,例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的(在半导体材料上制作电极的入H01L21/44)
H01L21/461 .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割
H01L21/469 ......在半导体材料上形成绝缘层的,例如,用于掩膜的或应用光刻技术的(密封层入H01L21/56)以及这些层的后处理
H01L21/4757 .......后处理
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