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发明申请
US20070040172A1 Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices 有权
源极/漏极，薄膜晶体管基板，其制造方法和显示装置

Source/drain electrodes, thin-film transistor substrates, manufacture methods thereof, and display devices
摘要：
A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.
摘要（中）：

在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

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