发明申请
- 专利标题: Band gap circuit
- 专利标题(中): 带隙电路
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申请号: US11260176申请日: 2005-10-28
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公开(公告)号: US20070040600A1公开(公告)日: 2007-02-22
- 发明人: Suguru Tachibana , Kazuhiro Mitsuda , Tatsuo Kato
- 申请人: Suguru Tachibana , Kazuhiro Mitsuda , Tatsuo Kato
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 优先权: JP2005-238729 20050819
- 主分类号: G05F1/10
- IPC分类号: G05F1/10
摘要:
A band gap circuit includes a voltage generating circuit, and a first and a second switched capacitor circuits (SCC). Operational amplifier in the first and the second SCC are connected though a coupling capacitor. Capacitance of the coupling capacitor is smaller than that of a feedback capacitor in the first SCC. A PTAT voltage is obtained by multiplying a thermal voltage by a coefficient determined based on capacitances of input capacitors and feedback capacitors in each of the first and the second SCC, and the coupling capacitor. The voltage generating circuit generates a forward bias voltage that has a negative temperature-dependency at a p-n junction. The PTAT voltage is added to the forward bias voltage to generate a reference voltage independent of temperature.
公开/授权文献
- US07236047B2 Band gap circuit 公开/授权日:2007-06-26
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