发明申请
- 专利标题： Method and apparatus to control semiconductor film deposition characteristics
- 专利标题（中）： 控制半导体膜沉积特性的方法和装置
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申请号： US11205647申请日： 2005-08-17
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公开(公告)号： US20070042117A1公开(公告)日： 2007-02-22
- 发明人: Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
- 申请人： Satheesh Kuppurao , David Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.