发明申请
- 专利标题： Method for making junction and processed material formed using the same
- 专利标题（中）： 使用其形成接合处理材料的方法
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申请号： US10574863申请日： 2004-10-08
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公开(公告)号： US20070042578A1公开(公告)日： 2007-02-22
- 发明人: Yuichiro Sasaki , Cheng-Guo Jin , Bunji Mizuno
- 申请人： Yuichiro Sasaki , Cheng-Guo Jin , Bunji Mizuno
- 申请人地址： JP Kadoma-shi
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JP Kadoma-shi
- 优先权： JP2003-350368 20031009
- 国际申请： PCT/JP04/15308 WO 20041008
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.
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