发明申请
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
-
申请号: US11589068申请日: 2006-10-30
-
公开(公告)号: US20070043522A1公开(公告)日: 2007-02-22
- 发明人: Hiroyuki Kobayashi , Atsumasa Sako
- 申请人: Hiroyuki Kobayashi , Atsumasa Sako
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 优先权: JP2003-375276 20031105; JP2004-187938 20040625
- 主分类号: G06F19/00
- IPC分类号: G06F19/00
摘要:
A temperature detector sets the level of a temperature detecting signal to a level indicating a high temperature state, detecting that the chip temperature is higher than a first boundary temperature. The temperature detector sets the level of thereof to a level indicating a low temperature state, detecting that the chip temperature is lower than a second boundary temperature. A control circuit changes its operating state according to the level of the temperature detecting signal. This prevents the operating state of the control circuit from frequently switched even when the chip temperature fluctuates around the boundary temperatures, and accordingly reduces current consumption of the control circuit due to the switching operation. Further, the first and second boundary temperatures set a buffer zone, so that the temperature detector does not detect power supply noises as temperature variation. This can prevent malfunction of the temperature detector and the semiconductor integrated circuit.
公开/授权文献
- US07532996B2 Semiconductor integrated circuit 公开/授权日:2009-05-12