发明申请
US20070044915A1 VACUUM PLASMA PROCESSOR HAVING A CHAMBER WITH ELECTRODES AND A COIL FOR PLASMA EXCITATION AND METHOD OF OPERATING SAME
有权
具有电极和用于等离子体激发的线圈的室的真空等离子体处理器及其操作方法
- 专利标题： VACUUM PLASMA PROCESSOR HAVING A CHAMBER WITH ELECTRODES AND A COIL FOR PLASMA EXCITATION AND METHOD OF OPERATING SAME
- 专利标题（中）： 具有电极和用于等离子体激发的线圈的室的真空等离子体处理器及其操作方法
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申请号： US11467449申请日： 2006-08-25
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公开(公告)号： US20070044915A1公开(公告)日： 2007-03-01
- 发明人: Tuqiang Ni , Wenli Collison , David Hemker , Lumin Li
- 申请人： Tuqiang Ni , Wenli Collison , David Hemker , Lumin Li
- 申请人地址： US CA Fremont 94538-6470
- 专利权人： LAM RESEARCH CORPORATION
- 当前专利权人： LAM RESEARCH CORPORATION
- 当前专利权人地址： US CA Fremont 94538-6470
- 主分类号： C23F1/00
- IPC分类号： C23F1/00 ; C23C16/00
摘要：
A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.