发明申请
- 专利标题： Silicon carbide semiconductor device having high channel mobility and method for manufacturing the same
- 专利标题（中）： 具有高沟道迁移率的碳化硅半导体器件及其制造方法
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申请号： US11511236申请日： 2006-08-29
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公开(公告)号： US20070045631A1公开(公告)日： 2007-03-01
- 发明人: Takeshi Endo , Tsuyoshi Yamamoto , Jun Kawai , Kensaku Yamamoto , Eiichi Okuno
- 申请人： Takeshi Endo , Tsuyoshi Yamamoto , Jun Kawai , Kensaku Yamamoto , Eiichi Okuno
- 申请人地址： JP Kariya-city
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 当前专利权人地址： JP Kariya-city
- 优先权： JP2005-251365 20050831; JP2006-162448 20060612
- 主分类号： H01L31/0312
- IPC分类号： H01L31/0312
摘要：
A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020 cm−3.
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