发明申请
- 专利标题: Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same
- 专利标题(中): 包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
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申请号: US11447932申请日: 2006-06-07
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公开(公告)号: US20070048672A1公开(公告)日: 2007-03-01
- 发明人: Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
- 申请人: Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2005-0078724 20050826
- 主分类号: G03C5/00
- IPC分类号: G03C5/00
摘要:
Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
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