发明申请
- 专利标题： METHOD OF FABRICATING NON-VOLATILE MEMORY
- 专利标题（中）： 制造非易失性存储器的方法
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申请号： US11306165申请日： 2005-12-19
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公开(公告)号： US20070048937A1公开(公告)日： 2007-03-01
- 发明人: Chin-Chung Wang , Chia-Ping Lai , Che-Huai Hung
- 申请人： Chin-Chung Wang , Chia-Ping Lai , Che-Huai Hung
- 优先权： TW94129440 20050829
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of fabricating a non-volatile memory is provided. A substrate having a memory cell area and a peripheral circuit area is provided. A plurality of device isolation structures is formed in the substrate. A tunneling dielectric layer is formed on the substrate in the memory cell area and a gate oxide layer is formed on the substrate in the peripheral circuit area. A first conductive layer is formed on the substrate to cover the memory cell area and the peripheral circuit area. The first conductive layer in the memory cell area is patterned. A composite dielectric layer is formed on the substrate. The composite dielectric layer in the peripheral circuit area is removed. A second conductive layer is formed on the substrate to cover the memory cell area and the peripheral circuit area.
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