Invention Application
- Patent Title: Metal work function adjustment by ion implantation
- Patent Title (中): 离子注入金属功函数调整
-
Application No.: US11217699Application Date: 2005-08-31
-
Publication No.: US20070048984A1Publication Date: 2007-03-01
- Inventor: Steven Walther , Ukyo Jeong , Sandeep Mehta , Naushad Variam
- Applicant: Steven Walther , Ukyo Jeong , Sandeep Mehta , Naushad Variam
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A system, method and program product for adjusting metal work function by ion implantation is disclosed. The invention determines the work function of the metal and determines a desired work function threshold for the metal. The desired work function threshold may be a range and is usually based on the work function of the substrate. An ion implanter system is then used to implant ions to at least a portion of the metal. The ion implantation is usually a high-energy ion stream including a material that is calculated to modify the work function of the metal. The ion implanter system continues to transmit the ion stream into the metal until the work function of the metal meets the desired work function threshold.
Information query
IPC分类:
