发明申请
US20070048990A1 Method of buffer layer formation for RRAM thin film deposition
审中-公开
RRAM薄膜沉积缓冲层形成方法
- 专利标题： Method of buffer layer formation for RRAM thin film deposition
- 专利标题（中）： RRAM薄膜沉积缓冲层形成方法
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申请号： US11215520申请日： 2005-08-30
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公开(公告)号： US20070048990A1公开(公告)日： 2007-03-01
- 发明人: Wei-Wei Zhuang , Sheng Hsu , David Evans , Tingkai Li , Lawrence Charneski
- 申请人： Wei-Wei Zhuang , Sheng Hsu , David Evans , Tingkai Li , Lawrence Charneski
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205
摘要：
A method of buffer layer formation for RRAM thin film deposition includes preparing a substrate; depositing a bottom electrode on the substrate; depositing a thin layer of a transition metal having a multiple valence on the bottom electrode; depositing a layer of metal oxide on the transition metal; depositing a top electrode on the metal oxide; annealing the substrate and the layers formed thereon; and completing the RRAM.
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