发明申请
- 专利标题： Dielectric film and process for its fabrication
- 专利标题（中）： 电介质膜及其制造工艺
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申请号： US11508923申请日： 2006-08-24
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公开(公告)号： US20070049026A1公开(公告)日： 2007-03-01
- 发明人: Yuki Miyamoto , Hitoshi Saita
- 申请人： Yuki Miyamoto , Hitoshi Saita
- 申请人地址： JP Tokyo 103-8272
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo 103-8272
- 优先权： JPP2005-252435 20050831
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/31
摘要：
A dielectric film production process comprising a baking step in which a dielectric film is formed by heating a precursor layer formed on a metal layer, wherein the metal layer contains at least one type of metal selected from the group consisting of Cu, Ni, Al, stainless steel and inconel, and during at least part of the baking step the precursor layer is heated in a reduced pressure atmosphere.
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