发明申请
- 专利标题: SILICA GLASS CRUCIBLE WITH BARIUM-DOPED INNER WALL
- 专利标题(中): 二氧化硅玻璃与双层内壁可溶
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申请号: US11536517申请日: 2006-09-28
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公开(公告)号: US20070051297A1公开(公告)日: 2007-03-08
- 发明人: Katsuhiko Kemmochi , Yasuo Ohama
- 申请人: Katsuhiko Kemmochi , Yasuo Ohama
- 申请人地址: US WA Camas 98607
- 专利权人: Heraeus Shin-Etsu America, Inc.
- 当前专利权人: Heraeus Shin-Etsu America, Inc.
- 当前专利权人地址: US WA Camas 98607
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04
摘要:
A silica glass crucible includes a thin barium-doped inner layer, a stable, bubble-free intermediate layer, and a stable opaque outer layer. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica. The crucible demonstrates reduced bubble growth during a Czochralski process. As a result of the thin barium-doped layer and the reduced bubble growth, the inner surface of the crucible is uniformly minimally textured during a CZ process. The present crucible is especially suited for intense CZ processes for manufacturing silicon ingots used for solar cells or with silicon that is heavily doped with antimony, boron, or arsenic.
公开/授权文献
- US07427327B2 Silica glass crucible with barium-doped inner wall 公开/授权日:2008-09-23
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