发明申请
- 专利标题: High blocking semiconductor component comprising a drift section
- 专利标题(中): 高阻塞半导体元件包括漂移部分
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申请号: US11464004申请日: 2006-08-11
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公开(公告)号: US20070052058A1公开(公告)日: 2007-03-08
- 发明人: Franz Hirler , Anton Mauder , Frank Pfirsch
- 申请人: Franz Hirler , Anton Mauder , Frank Pfirsch
- 优先权: DE102004007197.7 20040213
- 主分类号: H01L23/58
- IPC分类号: H01L23/58 ; H01L21/336
摘要:
A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).
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