发明申请
- 专利标题: Semiconductor device fabrication method
- 专利标题(中): 半导体器件制造方法
-
申请号: US11501109申请日: 2006-08-09
-
公开(公告)号: US20070054482A1公开(公告)日: 2007-03-08
- 发明人: Takahito Nakajima , Yoshihiro Uozumi , Mikie Miyasato , Tsuyoshi Matsumura , Yasuhito Yoshimizu , Hiroshi Tomita , Hiroki Sakurai
- 申请人: Takahito Nakajima , Yoshihiro Uozumi , Mikie Miyasato , Tsuyoshi Matsumura , Yasuhito Yoshimizu , Hiroshi Tomita , Hiroki Sakurai
- 优先权: JP2004-233405 20040810; JP2005-358703 20051213
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
According to one aspect of the invention, there is provided a semiconductor device fabrication method having: forming a film on a semiconductor substrate; forming a mask comprising a predetermined pattern on the film; etching one of the film and the semiconductor substrate by using the mask; and performing at least one of the steps of performing a treatment using one of an aqueous solution of at least one of ammonia and amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine, a treatment using a liquid chemical containing fluorine and at least one of amine, the amine being selected from primary amine, secondary amine, tertiary amine, and quaternary amine and fluorine, and a treatment using a liquid chemical containing at least ammonia and fluorine and including a pH of not less than 6, particularly, not less than 9.