发明申请
- 专利标题： POLYSILICON ETCHING METHODS
- 专利标题（中）： 多晶硅蚀刻方法
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申请号： US11162550申请日： 2005-09-14
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公开(公告)号： US20070056930A1公开(公告)日： 2007-03-15
- 发明人: Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
- 申请人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
- 申请人地址： US NY Armonk JP Tokyo US NJ Park Ridge
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,SONY CORPORATION,SONY ELECTRONICS INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,SONY CORPORATION,SONY ELECTRONICS INC.
- 当前专利权人地址： US NY Armonk JP Tokyo US NJ Park Ridge
- 主分类号： C03C25/68
- IPC分类号： C03C25/68 ; B44C1/22 ; H01L21/461 ; C23F1/00
摘要：
Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.