发明申请
- 专利标题： Electrode structure and method of manufacturing the same, phase-change memory device having the electrode structure and method of manufacturing the same
- 专利标题（中）： 电极结构及其制造方法，具有电极结构的相变存储器件及其制造方法
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申请号： US11484676申请日： 2006-07-12
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公开(公告)号： US20070057308A1公开(公告)日： 2007-03-15
- 发明人: Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
- 申请人： Chung-Ki Min , Yong-Sun Ko , Kyung-Hyun Kim
- 优先权： KR2005-0063326 20050713
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
Example embodiments of the present invention relate to an electrode structure, a method of manufacturing the electrode structure, a phase-change memory device having the electrode structure and a method of manufacturing the phase-change memory device. The electrode structure may include a pad, a first insulation layer pattern, a second insulation layer pattern and/or an electrode. The first insulation layer pattern may be formed on the pad. The first insulation layer pattern may have a first opening that partially exposes the pad. The second insulation layer pattern may be formed on the first insulation layer pattern. The second insulation layer pattern may have a second opening connected to the first opening. The electrode may be formed on the pad and filling the first and the second openings.