Disclosed are methods of forming ferroelectric material layers introducing a plurality of metallorganic source compounds into the reaction chamber, the source compounds being supplied in an appropriate ratio for forming the ferroelectric material. These metallorganic source compounds are, in turn, reacted with a NyOx/O2 oxidant gas mixture in which the NyOxcomponent(s) represents at least 50 volume percent of the oxidant gas. This mixture of metallorganic source compounds and oxidant gas mixture(s) are maintained at a deposition temperature and deposition pressure within the reaction chamber suitable for causing a reaction between the metallorganic source compounds and the oxidant gas for a deposition period sufficient to form the ferroelectric material layer. The resulting ferroelectric material layers exhibit improved uniformity, for example, near the interface with the bottom electrode.