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US20070058428A1 Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells 有权

  • 专利标题： Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
  • 申请号： US11317300
    申请日： 2005-12-27
  • 公开(公告)号： US20070058428A1
    公开(公告)日： 2007-03-15
  • 发明人: Dong Kang , Dae Byeon , Young Lim
  • 申请人： Dong Kang , Dae Byeon , Young Lim
  • 优先权： KR10-2005-83921 20050909
  • 主分类号： G11C16/04
  • IPC分类号： G11C16/04
Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells
摘要：
A NAND-type nonvolatile semiconductor memory device comprising a cell string that comprises a dummy cell interposed between and connected in series to a string selection transistor and a nonvolatile memory cell is provided. The NAND-type nonvolatile semiconductor memory device further comprises a dummy word line driver adapted to activate a dummy word line to gate the dummy cell.
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