发明申请
US20070062648A1 Electrostatic chuck, thin film manufacturing apparatus having the same, thin film manufacturing method, and substrate surface treatment method
审中-公开
静电吸盘，具有该静电吸盘的薄膜制造装置，薄膜制造方法和基板表面处理方法
- 专利标题： Electrostatic chuck, thin film manufacturing apparatus having the same, thin film manufacturing method, and substrate surface treatment method
- 专利标题（中）： 静电吸盘，具有该静电吸盘的薄膜制造装置，薄膜制造方法和基板表面处理方法
-
申请号： US11515650申请日： 2006-09-05
-
公开(公告)号： US20070062648A1公开(公告)日： 2007-03-22
- 发明人: Shigeru Senbonmatsu , Shuhei Yamamoto , Mitsuru Suginoya , Hideki Matsumura , Atsushi Masuda
- 申请人： Shigeru Senbonmatsu , Shuhei Yamamoto , Mitsuru Suginoya , Hideki Matsumura , Atsushi Masuda
- 优先权： JP2005-263294 20050912
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H05H1/24 ; C23C16/00
摘要：
A difficulty has been given, that is, in a condition that an electrostatic chuck having an oxide layer as a dielectric layer is set in catalytic chemical vapor deposition apparatus, as a silicon thin film is repeatedly deposited on a workpiece held by the electrostatic chuck, adsorbing power of the electrostatic chuck is gradually decreased, and finally the chuck does not adsorb a substrate at all. Thus, a dielectric layer on a surface of the electrostatic chuck is covered with an insulating film containing silicon nitride or silicon oxide. Thus, since damage to a chuck surface can be prevented, the damage being due to hydrogen radicals generated during depositing the silicon film by the catalytic chemical vapor deposition apparatus, even if the silicon film is repeatedly deposited, power for adsorbing the substrate is not decreased, and consequently substrate temperature is stabilized during depositing the silicon film.