A method for manufacturing a light-emitting diode is described, comprising the following steps. A substrate is provided. An illuminant epitaxial structure is formed on the substrate, wherein the illuminant epitaxial structure comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked on the substrate in sequence, a surface of the second conductivity type semiconductor layer includes at least one epitaxial defect formed therein, and the first conductivity type semiconductor layer and the second conductivity type semiconductor layer are opposite conductivity types. Then, an insulation layer is formed to fill into the epitaxial defect in the second conductivity type semiconductor layer. A transparent electrode layer is formed on the surface of the second conductivity type semiconductor layer.