FABRICATING METHOD FOR FLEXIBLE THIN FILM TRANSISTOR ARRAY SUBSTRATE

Invention Application

US20070065993A1 FABRICATING METHOD FOR FLEXIBLE THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权

Title translation: 柔性薄膜晶体管阵列基板的制造方法

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Patent Title: FABRICATING METHOD FOR FLEXIBLE THIN FILM TRANSISTOR ARRAY SUBSTRATE
Patent Title (中): 柔性薄膜晶体管阵列基板的制造方法
Application No.: US11306564

Application Date: 2006-01-03
Publication No.: US20070065993A1

Publication Date: 2007-03-22
Inventor: Te-chi Wong , Jian-Shu Wu , Horng-Long Tyan , Chyi-Ming Leu
Applicant: Te-chi Wong , Jian-Shu Wu , Horng-Long Tyan , Chyi-Ming Leu
Priority: TW94132258 20050919
Main IPC: H01L21/84
IPC: H01L21/84

FABRICATING METHOD FOR FLEXIBLE THIN FILM TRANSISTOR ARRAY SUBSTRATE

Abstract:

A method of fabricating a flexible thin film transistor array substrate is provided. First, a rigid substrate is provided, and a polymer material layer is coated on the rigid substrate. Then, an insulating layer is coated over the polymer material layer by a spin coating process. The insulating layer covers the sides of the polymer material layer. Thereafter, a thin film transistor array is formed over the insulating layer. Then, the polymer material layer having the thin film transistor array is separated from the rigid substrate.

Abstract(Chinese):

提供一种制造柔性薄膜晶体管阵列基板的方法。首先，提供刚性基板，并且在刚性基板上涂覆聚合物材料层。然后，通过旋涂法将绝缘层涂覆在聚合物材料层上。绝缘层覆盖聚合物材料层的侧面。此后，在绝缘层上形成薄膜晶体管阵列。然后，将具有薄膜晶体管阵列的聚合物材料层与刚性基板分离。

Public/Granted literature

US07279401B2 Fabricating method for flexible thin film transistor array substrate Public/Granted day:2007-10-09

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体