发明申请
- 专利标题： Method of fabricating silicon nitride layer and method of fabricating semiconductor device
- 专利标题（中）： 制造氮化硅层的方法和制造半导体器件的方法
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申请号： US11233831申请日： 2005-09-22
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公开(公告)号： US20070066022A1公开(公告)日： 2007-03-22
- 发明人: Neng-Kuo Chen , Teng-Chun Tsai , Hsiu-Lien Liao
- 申请人： Neng-Kuo Chen , Teng-Chun Tsai , Hsiu-Lien Liao
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method of fabricating a silicon nitride layer is described. First, a substrate is provided. Then, a silicon nitride layer is formed on the substrate. The silicon nitride layer is UV-cured in an atmosphere lower than the standard atmospheric pressure. Through the UV curing treatment, the tensile stress of the silicon nitride layer is increased.