发明申请
- 专利标题: METHOD OF FABRICATING CONDUCTIVE LAYER
- 专利标题(中): 制导导电层的方法
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申请号: US11162696申请日: 2005-09-20
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公开(公告)号: US20070066055A1公开(公告)日: 2007-03-22
- 发明人: Chien-Hsin Huang , Wen-Ping Yen
- 申请人: Chien-Hsin Huang , Wen-Ping Yen
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method of fabricating a patterned conductive layer is provided. First, a conductive layer whose material includes at least aluminum-copper (Al—Cu) alloy is formed on a substrate. Then, a heat treatment process is performed to heat the conductive layer to a temperature higher than the phase change temperature of the Al—Cu alloy. Next, the conductive layer is patterned. The method in the present invention can avoid the formation of metallic educt and facilitate subsequent etching processes.
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