发明申请
US20070066086A1 METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW FILM STRESS
审中-公开
形成具有低介电常数和低膜应力的含硅绝缘膜的方法
- 专利标题： METHOD OF FORMING SILICON-CONTAINING INSULATION FILM HAVING LOW DIELECTRIC CONSTANT AND LOW FILM STRESS
- 专利标题（中）： 形成具有低介电常数和低膜应力的含硅绝缘膜的方法
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申请号： US11550917申请日： 2006-10-19
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公开(公告)号： US20070066086A1公开(公告)日： 2007-03-22
- 发明人: Yasuyoshi HYODO , Nobuo MATSUKI , Masashi YAMAGUCHI , Atsuki FUKAZAWA , Naoki OHARA , Yijun LIU
- 申请人： Yasuyoshi HYODO , Nobuo MATSUKI , Masashi YAMAGUCHI , Atsuki FUKAZAWA , Naoki OHARA , Yijun LIU
- 申请人地址： JP Tokyo 206-0025
- 专利权人： ASM JAPAN K.K.
- 当前专利权人： ASM JAPAN K.K.
- 当前专利权人地址： JP Tokyo 206-0025
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas consisting of a silicon-containing hydrocarbon linear compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.
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