发明申请
- 专利标题： Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby
- 专利标题（中）： 因此，氮化物半导体发光器件和氮化物半导体发光器件的制造方法
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申请号： US11527672申请日： 2006-09-27
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公开(公告)号： US20070069226A1公开(公告)日： 2007-03-29
- 发明人: Dae Kang
- 申请人： Dae Kang
- 专利权人： LG INNOTEK CO., LTD
- 当前专利权人： LG INNOTEK CO., LTD
- 优先权： KR10-2005-0090291 20050928
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
A method for fabricating a nitride semiconductor light emitting device, and a nitride semiconductor light emitting device fabricated thereby are provided. The method includes: forming a first conductive nitride semiconductor layer on a substrate; forming an active layer on the first conductive nitride semiconductor layer; forming a second conductive nitride semiconductor layer on the active layer; and lowering a temperature while adding oxygen to the result by performing a thermal process.