发明申请
- 专利标题： Stacked capacitor and method of fabricating same
- 专利标题（中）： 堆叠电容器及其制造方法
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申请号： US11549248申请日： 2006-10-13
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公开(公告)号： US20070069269A1公开(公告)日： 2007-03-29
- 发明人: Scott Balster , Badih El-Kareh , Philipp Steinmann , Christoph Dirnecker
- 申请人： Scott Balster , Badih El-Kareh , Philipp Steinmann , Christoph Dirnecker
- 优先权： DE10324066.7 20030527
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L29/94 ; H01L29/76 ; H01L31/119
摘要：
The invention relates to a stacked capacitor (10) comprising a silicon base plate (16), a poly-silicon center plate (32) arranged above the base plate (16), a lower gate-oxide dielectric (26) arranged between the base plate (16) and the center plate (32), a cover plate (36) made of a metallic conductor and arranged above the center plate (32), and an upper dielectric (34) arranged between the center plate (32) and the cover plate (36). The cover plate (36) and the base plate (16) are electrically connected to each other and together form a first capacitor electrode. The center plate (32) forms a second capacitor electrode. The invention further relates to an integrated circuit with such a stacked capacitor, as well as to a method for fabrication of a stacked capacitor as part of a CMOS process.
公开/授权文献
- US07312119B2 Stacked capacitor and method of fabricating same 公开/授权日：2007-12-25