发明申请
- 专利标题: Memory
- 专利标题(中): 记忆
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申请号: US11524273申请日: 2006-09-21
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公开(公告)号: US20070070764A1公开(公告)日: 2007-03-29
- 发明人: Hideaki Miyamoto , Shigeharu Matsushita
- 申请人: Hideaki Miyamoto , Shigeharu Matsushita
- 专利权人: SANYO ELECTRIC CO., LTD.
- 当前专利权人: SANYO ELECTRIC CO., LTD.
- 优先权: JPJP2005-279013 20050927
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
This memory comprises a first frequency detecting portion detecting access frequencies with respect to a plurality of memory cell blocks respectively, a comparator comparing the access frequencies with respect to the plurality of memory cell blocks detected by the first frequency detecting portion with each other and a refresh portion exercising control for selecting a prescribed memory cell block from among the plurality of memory cell blocks on the basis of comparison data output from the comparator and preferentially rewriting data in the memory cells included in the selected memory cell block.
公开/授权文献
- US07379323B2 Memory with a refresh portion for rewriting data 公开/授权日:2008-05-27
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