发明申请
- 专利标题： Semiconductor device, method for manufacturing the same and method for evaluating the same
- 专利标题（中）： 半导体装置及其制造方法及其评价方法
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申请号： US11526879申请日： 2006-09-26
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公开(公告)号： US20070072397A1公开(公告)日： 2007-03-29
- 发明人: Shoichi Yamauchi , Takumi Shibata , Tomonori Yamaoka , Syouji Nogami
- 申请人： Shoichi Yamauchi , Takumi Shibata , Tomonori Yamaoka , Syouji Nogami
- 申请人地址： JP Kariya-city JP Tokyo
- 专利权人： DENSO CORPORATION,SUMCO CORPORATION
- 当前专利权人： DENSO CORPORATION,SUMCO CORPORATION
- 当前专利权人地址： JP Kariya-city JP Tokyo
- 优先权： JP2005-0285697 20050929
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as α. The second epitaxial film has an impurity concentration defined as β. The arsenic concentration and the impurity concentration has a relationship of: α≦3×33 109×ln(β)−1×1021.
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