发明申请
- 专利标题： Reduced current phase-change memory device
- 专利标题（中）： 减少电流相变存储器件
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申请号： US11440236申请日： 2006-05-24
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公开(公告)号： US20070075304A1公开(公告)日： 2007-04-05
- 发明人: Heon Chang , Suk Kyoung Hong , Hae Park
- 申请人： Heon Chang , Suk Kyoung Hong , Hae Park
- 优先权： KR10-2005-0092025 20050930
- 主分类号： H01L29/04
- IPC分类号： H01L29/04
摘要：
A phase-change memory device more precisely controls electrical current required to accomplish a phase change by using contact holes that extend between phase change layers that are sized differently from each other.
公开/授权文献
- US07667219B2 Reduced current phase-change memory device 公开/授权日：2010-02-23