Invention Application
- Patent Title: NEGATIVE PHOTORESIST FOR SILICON KOH ETCH WITHOUT SILICON NITRIDE
- Patent Title (中): 无硅氮化物的硅酮蚀刻剂负极光电剂
-
Application No.: US11470520Application Date: 2006-09-06
-
Publication No.: US20070075309A1Publication Date: 2007-04-05
- Inventor: Xing-Fu Zhong , Jyoti Malhotra , Chenghong Li
- Applicant: Xing-Fu Zhong , Jyoti Malhotra , Chenghong Li
- Main IPC: H01L51/00
- IPC: H01L51/00 ; G03C5/00 ; H01L35/24
Abstract:
New photoresists for use during the production of semiconductor and MEMS devices are provided. The primer layer preferably comprises a silane dissolved or dispersed in a solvent system. The photoresist layer includes copolymers prepared from styrene, acrylonitrile, and epoxy-containing monomers. The photoresist layer comprises a photoacid generator, and is preferably negative-acting.
Public/Granted literature
- US07695890B2 Negative photoresist for silicon KOH etch without silicon nitride Public/Granted day:2010-04-13
Information query
IPC分类:
