Metal interconnection lines of semiconductor devices and methods of forming the same are disclosed. Improved reliability is achieved in a disclosed metal line of a semiconductor device by preventing metal layers from eroding and preventing metal lines from being destroyed due to electro-migration (EM) and stress-migration (SM). An illustrated metal interconnection line includes: a semiconductor substrate; a metal pattern on the substrate; a glue pattern under the metal pattern; an anti-reflection pattern on the metal pattern; and dummy patterns surrounding side walls of the metal pattern.