发明申请
- 专利标题： Method for forming transistor of semiconductor device
- 专利标题（中）： 半导体器件晶体管形成方法
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申请号： US11303225申请日： 2005-12-15
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公开(公告)号： US20070077717A1公开(公告)日： 2007-04-05
- 发明人: Jae Kim , Hye Seo
- 申请人： Jae Kim , Hye Seo
- 申请人地址： KR Gyunggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyunggi-do
- 优先权： KR2005-92374 20050930
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A method for forming a transistor of a semiconductor device includes forming a spacer oxide film having a uniform thickness i at a high speed. The method includes forming a plurality of gate stacks on a semiconductor substrate; and forming a spacer oxide film on a plurality of the gate stacks by alternately supplying trimethyl aluminum in a gaseous state and tris-(tert-alkoxy)-silanol in a gaseous state to the semiconductor substrate.
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