发明申请
- 专利标题： Semiconductor device and manufacturing method therefor
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11291837申请日： 2005-12-02
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公开(公告)号： US20070077721A1公开(公告)日： 2007-04-05
- 发明人: Hiroyuki Kanaya
- 申请人： Hiroyuki Kanaya
- 优先权： JP2005-286214 20050930
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/8242
摘要：
A semiconductor device comprising a capacitive element which is provided above the semiconductor substrate and which has a capacitive insulation film held between an upper electrode and a lower electrode, a conductor for upper electrode which is connected to the upper electrode, a side-wall adsorbent member which covers a side wall of the conductor for upper electrode and which is composed of a material that adsorbs at least hydrogen, a conductor for lower electrode which is connected to the lower electrode, and a first adsorbent member which is provided at least either between the conductor for upper electrode and the capacitive insulation film or between the conductor for lower electrode and the capacitive insulation film, and which is composed of a material that adsorbs at least hydrogen.
公开/授权文献
- US07504684B2 Semiconductor device and manufacturing method therefor 公开/授权日：2009-03-17