发明申请
US20070077774A1 Method for manufacturing a semiconductor device having a stepped contact hole
审中-公开
一种具有阶梯式接触孔的半导体器件的制造方法
- 专利标题： Method for manufacturing a semiconductor device having a stepped contact hole
- 专利标题（中）： 一种具有阶梯式接触孔的半导体器件的制造方法
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申请号： US11529328申请日： 2006-09-29
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公开(公告)号： US20070077774A1公开(公告)日： 2007-04-05
- 发明人: Kazuyoshi Yoshida
- 申请人： Kazuyoshi Yoshida
- 申请人地址： JP TOKYO
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP TOKYO
- 优先权： JP2005-286728 20050930
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A process for forming a stepped contact hole includes: dry-etching a portion of a silicon oxide film using a mixed gas including carbon-rich fluorocarbon gas to form a first contact hole, forming a specific film on the sidewall of the first contact hole; dry-etching the remaining portion of the silicon oxide film at the bottom of the first contact hole by using the specific film as a mask to form a second contact hole extending from the first contact hole; and removing the specific film.
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