发明申请
US20070081403A1 Semiconductor memory device 审中-公开
半导体存储器件

  • 专利标题: Semiconductor memory device
  • 专利标题(中): 半导体存储器件
  • 申请号: US11246223
    申请日: 2005-10-11
  • 公开(公告)号: US20070081403A1
    公开(公告)日: 2007-04-12
  • 发明人: Yasuhiro Nanba
  • 申请人: Yasuhiro Nanba
  • 主分类号: G11C29/00
  • IPC分类号: G11C29/00
Semiconductor memory device
摘要:
A second roll call test mode is added in addition to a first roll call test mode for checking use/nonuse of a redundancy circuit. A semiconductor memory device is capable of confirming program states of an enable fuse and each address fuse by providing with a logic circuit which blocks program information of the enable fuse by using a second test mode signal.
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