发明申请
- 专利标题： Method for manufacturing compound semiconductor substrate
- 专利标题（中）： 化合物半导体基板的制造方法
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申请号： US10577069申请日： 2004-10-25
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公开(公告)号： US20070082467A1公开(公告)日： 2007-04-12
- 发明人: Masahiko Hata , Yoshinobu Ono , Kazumasa Ueda
- 申请人： Masahiko Hata , Yoshinobu Ono , Kazumasa Ueda
- 申请人地址： JP Tokyo 104-8260
- 专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人地址： JP Tokyo 104-8260
- 优先权： JP2003-365736 20031027
- 国际申请： PCT/JP04/16186 WO 20041025
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36 ; H01L31/20 ; H01L21/30 ; H01L21/46
摘要：
The present invention provides a method for manufacturing a compound semiconductor substrate. The method for manufacturing a compound semiconductor substrate comprises the steps of: (a) epitaxially growing a compound semiconductor functional layer 2 on a substrate 1, (b) bonding a support substrate 3 to the compound semiconductor functional layer 2, (c) polishing the substrate 1 and a part of the compound semiconductor functional layer 2 on the side which is in contact with the substrate 1, to remove them, (d) bonding a thermally conductive substrate 4 having a thermal conductivity higher than that of the substrate 1 to the exposed surface of the compound semiconductor functional layer 2 which is provided in the step (c) to obtain a multilayer substrate and (d) separating the support substrate 3 from the multilayer substrate.
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