Invention Application
- Patent Title: PLANAR VOLTAGE CONTRAST TEST STRUCTURE
- Patent Title (中): 平面电压对比度测试结构
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Application No.: US11558079Application Date: 2006-11-09
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Publication No.: US20070085556A1Publication Date: 2007-04-19
- Inventor: Seng-Keong Victor Lim , Dennis Tan , Tze Ho Simon Chan
- Applicant: Seng-Keong Victor Lim , Dennis Tan , Tze Ho Simon Chan
- Applicant Address: SG Singapore 738406
- Assignee: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- Current Assignee: CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- Current Assignee Address: SG Singapore 738406
- Main IPC: G01R31/02
- IPC: G01R31/02
Abstract:
An integrated circuit and e-beam testing method are disclosed. The integrated circuit includes a test structure with a ground grid, a metal pad having a space therein and positioned within the ground grid, and a metal line connected to the ground grid and positioned in the space. Structures for detecting open circuits and short circuits are described.
Public/Granted literature
- US07902548B2 Planar voltage contrast test structure Public/Granted day:2011-03-08
Information query
