发明申请
- 专利标题： PLANAR VOLTAGE CONTRAST TEST STRUCTURE
- 专利标题（中）： 平面电压对比度测试结构
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申请号： US11558079申请日： 2006-11-09
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公开(公告)号： US20070085556A1公开(公告)日： 2007-04-19
- 发明人: Seng-Keong Victor Lim , Dennis Tan , Tze Ho Simon Chan
- 申请人： Seng-Keong Victor Lim , Dennis Tan , Tze Ho Simon Chan
- 申请人地址： SG Singapore 738406
- 专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人： CHARTERED SEMICONDUCTOR MANUFACTURING LTD.
- 当前专利权人地址： SG Singapore 738406
- 主分类号： G01R31/02
- IPC分类号： G01R31/02
摘要：
An integrated circuit and e-beam testing method are disclosed. The integrated circuit includes a test structure with a ground grid, a metal pad having a space therein and positioned within the ground grid, and a metal line connected to the ground grid and positioned in the space. Structures for detecting open circuits and short circuits are described.
公开/授权文献
- US07902548B2 Planar voltage contrast test structure 公开/授权日：2011-03-08
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