发明申请
US20070092732A1 Low k dielectric inorganic/organic hybrid films and method of making 有权
低k介电无机/有机杂化膜及其制备方法

Low k dielectric inorganic/organic hybrid films and method of making
摘要:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
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